Результаты деятельности

Публикации лаборатории Полякова А.Я. «Широкозонные материалы»

за период с июля 2014 г. по настоящее время

2014

Авторы

Название публикации

Название журнала

Выходные данны

IF WoS

IPP Scopus

цит WoS

цит. Scopus

1

Jeon, DW; Jang, LW;
Cho, HS; Kwon, KS;
Dong, MJ; Polyakov, AY;
Ju, JW; Chung, TH; Baek,
JH; Lee, IH

Enhanced optical output performance in InGaN/GaN light-emitting diode embedded with SiO2 nanoparticles

OPTICS EXPRESS

Том: 22 Выпуск: 18 Стр.: 21454-21459 DOI: 10.1364/OE.22.021454 Опубликовано: SEP 8 2014

3,148

3,044

1

0

2

Polyakov, A.Y., Smirnov, N.B.,
Yakimov, E.B
., Usikov, A.S.,
Helava, H., Shcherbachev, K.D.,
Govorkov, A.V., Makarov, Y.N.,
Lee, I.-H.

Electrical, optical, and structural properties of GaN films prepared by hydride vapor phase epitaxy

Journal of Alloys and Compounds

Volume 617, 25 December 2014, Pages 200-206

3,014

2,856

6

6

3

Jang, L.-W, Jeon, D.-W.,
Polyakov, A.Y., Govorkov, A.V.,
Sokolov, V.N., Smirnov, N.B.,
Cho, H.-S., Yun, J.-H.,
Shcherbatchev, K.D
., Baek, J.-H.,
Lee, I.-H.

Electrical and structural properties of GaN films and GaN/InGaN light-emitting diodes grown on porous GaN templates fabricated by combined electrochemical and photoelectrochemical etching

Journal of Alloys and Compounds

Volume 589, 15 March 2014, Pages 507-512

3,014

2,856

7

7

4

Khan, R., Hassan, M.S.,
Cho, H.-S., Polyakov, A.Y.,
Khil, M.-S., Lee, I.-H.

Facile low-temperature synthesis of ZnO nanopyramid and its application to photocatalytic degradation of methyl orange dye under UV irradiation

Materials Letters

Volume 133, 15 October 2014, Pages 224-227

2,437

2,306

9

10

5

Lee, I.-H., Polyakov, A.Y.,
Smirnov, N.B.
, Govorkov, A.V.,
Usikov, A.S., Helava, H.,
Makarov, Yu.N., Pearton, S.J.

Deep hole traps in undoped n-GaN films grown by hydride vapor phase epitaxy

Journal of Applied Physics

Volume 115, Issue 22, 14 June 2014, Article number 223702

2,101

1,388

8

5

6

Polyakov, A.Y., Smirnov, N.B.,
Govorkov, A.V., Yugova, T.G.,
Cox, H., Usikov, A.S., Helava, H.,
Makarov, Yu.

Hydride vapor phase GaN films with reduced density of residual electrons and deep traps

Journal of Applied Physics

Volume 115, Issue 18, 14 May 2014, Article number 183706

2,101

1,388

4

4

7

Blank, V., Buga, S., Bormashov, V.,
Denisov, V., Kirichenko, A.,
Kulbachinskii, V., Kuznetsov, M.,
Kytin, V., Kytin, G., Tarelkin, S.,
Terentiev, S.

Weak superconductivity in the surface layer of a bulk single-crystal boron-doped diamond

EPL

Volume 108, Issue 6, 1 December 2014, Article number 67014

1,963

1,060

1

0

8

Polyakov, A.Y., Yakimov, E.B.,
Smirnov, N.B.
, Govorkov, A.V.,
Usikov, A.S., Helava, H.,
Makarov, Y.N., Lee, I.-H.

Structural defects responsible for excessive leakage current in Schottky diodes prepared on undoped n-GaN films grown by hydride vapor phase epitaxy

Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics

Volume 32, Issue 5, 1 September 2014, Article number 051212

1,398

0,621

1

1

9

Lee, I.-H., Polyakov, A.Y., Smirnov, N.B., Hahn, C.-K., Pearton, S.J.

Spatial location of the Ec-0.6 eV electron trap in AlGaN/GaN heterojunctions

Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics

Volume 32, Issue 5, 1 September 2014, Article number 050602

1,398

0,621

4

3

10

A.Y, Polyakov, Smirnov, N.B., Govorkov, A.V., Cox, H., Usikov, A.S., Helava, H., Makarov, Y.N., Yakimov, E.B., Lee, I.H.

Deep traps spectra in undoped gan films grown by hydride vapor phase epitaxy under various conditions

American Journal of Applied Sciences

Volume 11, Issue 9, 30 September 2014, Pages 1714-1721

-

0,652

0

0

11

Pearton, S.J., Ren, F., Hwang, Y.H., Li, S., Hsieh, Y., Polyakov, A.Y., Kim, J.

Effects of radiation damage in gan and related materials ( Book Chapter)

Gallium Nitride: Structure, Thermal Properties and Applications

October 01, 2014, Pages 1-32

-

0,000

0

0

 

 

 

 

 

2,06

 

41

36


 

2015

1

Polyakov, A.Y., Lee, I.-H.

Deep traps in GaN-based structures as affecting the performance of GaN devices

Materials Science and Engineering R: Reports

Volume 94, 28 May 2015, Pages 1-56

24,652

21,700

13

17

2

Lee IH, Jang LW, Polyakov AY

Performance enhancement of GaN-based light emitting diodes by the interaction with localized surface plasmons

Nano Energy

Том: 13Стр.: 140-173Опубликовано: APR 2015

11,553

10,305

10

8

3

Jang LW, Park H, Lee SH, Polyakov AY, Khan R, Yang JK, Lee IH

Device performance of inverted polymer solar cells with AgSiO2 nanoparticles in active layer

Optics Express

Том: 23Выпуск: 7Стр.: A211-A218Опубликовано: APR 6 2015

3,148

3,044

1

1

4

Yakimov EB, Vergeles PS, Polyakov AY, Lee IH, Pearton SJ

Movement of basal plane dislocations in GaN during electron beam irradiation

Applied Physics Letters

Том: 106, Выпуск: 13, Номер статьи: 132101, Опубликовано: MAR 30 2015

3,142

2,121

3

3

5

Yakimov, E.B.

What is the real value of diffusion length in GaN?

Journal of Alloys and Compounds

Volume 627, 5 April 2015, Pages 344-351

3,014

2,856

7

8

6

Polyakov AY, Yun JH, Ahn HK, Usikov AS, Yakimov EB, Tarelkin SA, Smirnov NB, Shcherbachev KD, Helava H, Makarov YN, Kurin SY, Didenko SI, Papchenko BP, Lee IH

Photoluminescence enhancement by localized surface plasmons in AlGaN/GaN/AlGaN double heterostructures

Physica Status Solidi - Rapid Research Letters

Volume 9, Issue 10, October 2015, Pages 575-579

2,578

2,131

0

0

7

Polyakov AY, Yun JH, Ahn HK, Usikov AS, Yakimov EB, Tarelkin SA, Smirnov NB, Shcherbachev KD, Helava H, Makarov YN, Kurin SY, Didenko SI, Papchenko BP, Lee IH

Photoluminescence enhancement by localized surface plasmons in AlGaN/GaN/AlGaN double heterostructures

Physica Status Solidi - Rapid Research Letters

Volume 9, Issue 10, October 2015, Pages 575-579

2,578

2,131

0

0

8

Yun JH, Cho HS, Bae KB, Sudhakar S, Kang YS, Lee JS, Polyakov AY, Lee IH

Enhanced optical properties of nanopillar light-emitting diodes by coupling localized surface plasmon of Ag/SiO2 nanoparticles

Applied Physics Express

Том: 8 Выпуск: 9 Номер статьи: 092002 Опубликовано: SEP 2015

2,265

1,450

1

1

9

Blank, V.D., Bormashov, V.S., Tarelkin, S.A., Buga, S.G., Kuznetsov, M.S., Terentiev, S.A., Volkov, A.P.

Power high-voltage and fast response Schottky barrier diamond diodes

Diamond and Related Materials

Volume 57, 1 August 2015, Article number6361, Pages 32-36

2,125

1,937

7

9

10

Regula, G., Yakimov, E.B.

Effect of low energy electron beam irradiation on Shockley partial dislocations bounding stacking faults introduced by plastic deformation in 4H-SiC in its brittle temperature range

Superlattices and Microstructures

December 18, 2015

2,117

2,118

0

0

11

Orlov, V.I., Yakimov, E.B.

Extended defect study in Si: EBIC versus LBIC

Superlattices and Microstructures

December 18, 2015

2,117

2,118

0

0

12

Shabelnikova, Y., Yakimov, E.

Diffusion length and grain boundary recombination activity determination by means of induced current methods

Superlattices and Microstructures

December 18, 2015

2,117

2,118

0

0

13

Tarelkin, S., Bormashov, V., Buga, S., Volkov, A., Teteruk, D., Kornilov, N.,Kuznetsov, M.,Terentiev, S., Golovanov, A., Blank, V.

Power diamond vertical Schottky barrier diode with 10 A forward current

Physica Status Solidi (A) Applications and Materials Science

Том: 212 Выпуск: 11 Специальный выпуск: SI Стр.: 2621-2627 Опубликовано: NOV 2015

1,648

1,454

2

3

14

Bormashov, V., Troschiev, S., Volkov, A.,Tarelkin, S.,Korostylev,Golovanov, Kuznetsov, M.,Teteruk, D.,Kornilov,Terentiev, S., N., A., E., Buga, S., Blank, V.

Development of nuclear microbattery prototype based on Schottky barrier diamond diodes

Physica Status Solidi (A) Applications and Materials Science

Том: 212Выпуск: 11 Специальный выпуск: SI Стр.: 2539-2547 Опубликовано: NOV 2015

1,648

1,454

2

1

15

Polyakov, A.Y., Smirnov, N.B., Lee, I.-H., Pearton, S.J.

Deep level transient spectroscopy in III-Nitrides: Decreasing the effects of series resistance

Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics

Volume 33, Issue 6, 1 November 2015, Article number061203

1,398

0,621

4

3

16

Ovsyannikov, D.A., Popov, M.Y., Buga, S.G.,Kirichenko, A.N.,Tarelkin, S.A., Tat’yanin, E.V., Blank, V.D.

Transport properties of nanocomposite thermoelectric materials based on Si and Ge

Physics of the Solid State

Volume 57, Issue 3, 19 March 2015, Pages 605-612

0,831

0,731

0

0

17

Orlov, V.I., Feklisova, O.V., Yakimov, E.B.

EBIC and LBIC studies of the properties of extended defects in plastically deformed silicon

Semiconductors

Volume 49, Issue 6, 9 June 2015, Pages 720-723

0,701

0,783

0

0

18

Feklisova, O.V., Yakimov, E.B.

Effect of copper on the recombination activity of extended defects in silicon

Semiconductors

Volume 49, Issue 6, 9 June 2015, Pages 716-719

0,701

0,783

0

0

19

Polikarpov, M.A., Yakimov, E.B.

Study of the properties of silicon-based semiconductor converters for betavoltaic cells

Semiconductors

Volume 49, Issue 6, 9 June 2015, Pages 746-748

0,701

0,783

1

2

20

Vergeles, P.S., Yakimov, E.B.

Effect of low-energy electron irradiation on the optical properties of structures containing multiple InGaN/GaN quantum well

Semiconductors

Volume 49, Issue 2, 2015, Pages 143-148

0,701

0,783

2

2

21

Feklisova, O.V., Orlov, V.I., Yakimov, E.B.

EBIC and LBIC investigations of dislocation trails in Si

Physica Status Solidi (C) Current Topics in Solid State Physics

Volume 12, Issue 8, 1 August 2015, Pages 1081-1084

0,000

0,603

0

0

22

Yakimov, E.B., Polyakov, A.Y.

EBIC investigations of dislocations in ELOG GaN

Physica Status Solidi (C) Current Topics in Solid State Physics

Volume 12, Issue 8, 1 August 2015, Pages 1132-1135

0,000

0,603

1

1

23

Polyakov, A., Smirnov, N., Govorkov, A., Kozhukhova, E., Yugova, T.,Usikov, A. Helava, H., Makarov, Y.

Improved GaN films with low background doping and low deep trap density grown by hydride vapor phase epitaxy

Physica Status Solidi (C) Current Topics in Solid State Physics

Volume 12, Issue 4-5, 1 April 2015, Pages 341-344

0,000

0,603

0

0

24

Yakimov, E.B., Polyakov, A.Y.

EBIC investigations of dislocations in ELOG GaN

Physica Status Solidi (C) Current Topics in Solid State Physics

Volume 12, Issue 8, 1 August 2015, Pages 1132-1135

0,000

0,603

0

0

 

 

 

 

 

2,89

 

54

59

 

2016

1

Polyakov, A.Y., Smirnov, N.B., Yakimov, E.B., Tarelkin, S.A., Turutin, A.V., Shemerov, I.V., Pearton, S.J., Bae, K.-B., Lee, I.-H.

Deep traps determining the non-radiative lifetime and defect band yellow luminescence in n-GaN

Journal of Alloys and Compounds

Volume 686, 25 November 2016, Pages 1044-1052

3,014

2,856

0

0

2

Lee, I.-H., Polyakov, A.Y., Smirnov, N.B., Yakimov, E.B., Tarelkin, S.A., Turutin, A.V., Shemerov, I.V., Pearton, S.J.

Electron traps as major recombination centers in n-GaN films grown by metalorganic chemical vapor deposition

Applied Physics Express

Volume 9, Issue 6, June 2016, Article number 061002

2,265

1,450

0

0

3

Lee, I.-H., Polyakov, A.Y., Smirnov, N.B., Yakimov, E.B., Tarelkin, S.A., Turutin, A.V., Shemerov, I.V., Pearton, S.J.

Studies of deep level centers determining the diffusion length in epitaxial layers and crystals of undoped n-GaN

Journal of Applied Physics

Volume 119, Issue 20, 28 May 2016, Article number 205109

2,101

1,388

0

0

4

Polyakov, A.Y., Smirnov, N.B., Yakimov, E.B., Lee, I.-H., Pearton, S.J.

Electrical, luminescent, and deep trap properties of Si doped n-GaN grown by pendeo epitaxy

Journal of Applied Physics

Volume 119, Issue 1, 7 January 2016, Article number 015103

2,101

1,388

2

3

5

Prikhodko, D., Tarelkin, S., Bormashov, V., Golovanov, A., Kuznetsov, M., Teteruk, D., Volkov, A., Buga, S.

Thermal conductivity of synthetic boron-doped single-crystal HPHT diamond from 20 to 400 K

MRS Communications

Volume 6, Issue 2, 1 June 2016, Pages 71-76

1,797

1,523

0

0

6

Pearton, S.J., Ren, F., Patrick, E., Law, M.E., Polyakov, A.Y.

Review-Ionizing Radiation Damage Effects on GaN Devices

ECS Journal of Solid State Science and Technology

Volume 5, Issue 2, 2016, Pages Q35-Q60

1,650

1,565

2

4

7

Polyakov, A.Y., Cho, H.-S., Yun, J.-H., Lee, I.-H., Yakimov, E.B., Smirnov, N.B., Shcherbachev, K.D.

Electrical, Luminescent and Structural Properties of Nanopillar GaN/InGaN Multi-Quantum-Well Structures Prepared by Dry Etching

ECS Journal of Solid State Science and Technology

Volume 5, Issue 6, 2016, Pages Q165-Q170

1,650

1,565

0

0

8

Tarelkin, S., Bormashov, V., Korostylev, E., Troschiev, S., Teteruk, D., Golovanov, A., Volkov, A., Kornilov, N., Kuznetsov, M., Prikhodko, D., Buga, S.

Comparative study of different metals for Schottky barrier diamond betavoltaic power converter by EBIC technique

Physica Status Solidi (A) Applications and Materials Science

2016

1,648

1,454

0

0

9

Polyakov, A.Y., Smirnov, N.B., Turutin, A.V., Shemerov, I.S., Ren, F., Pearton, S.J., Johnson, J.W.

Deep traps and instabilities in AlGaN/GaN high electron mobility transistors on Si substrates

Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics

Volume 34, Issue 4, 1 July 2016, Article number 4953347

1,398

0,621

0

0

10

Yakimov, E.B.

Prediction of betavoltaic battery output parameters based on SEM measurements and Monte Carlo simulation

Applied Radiation and Isotopes

Volume 112, June 01, 2016, Pages 98-102

1,136

1,096

0

0

11

Yakimov, E.B., Vergeles, P.S., Polyakov, A.Y., Lee, I.-H., Pearton, S.J.

Radiation enhanced basal plane dislocation glide in GaN

Japanese Journal of Applied Physics

Volume 55, Issue 5, May 2016, Article number 05FM03

1,122

0,587

0

0

12

Yakimov, E.B.

Diffusion length measurements in GaN

Japanese Journal of Applied Physics

Volume 55, Issue 5, May 2016, Article number 05FH04

1,122

0,587

0

0

13

Yakimov, E.B., Vergeles, P.S., Polyakov, A.Y., Lee, I.-H., Pearton, S.J.

Radiation enhanced basal plane dislocation glide in GaN

Japanese Journal of Applied Physics

Volume 55, Issue 5, May 2016, Article number 05FM03

1,122

0,587

0

0

14

Polikarpov, M.A., Yakimov, E.B.

Characterization of Si convertors of beta-radiation in the scanning electron microscope

Solid State Phenomena

Volume 242, 2016, Pages 312-315

0,000

0,314

0

1

15

Orlov, V.I., Yakimov, E.B., Yarykin, N.

Spatial distribution of the dislocation trails in silicon

Solid State Phenomena

Volume 242, 2016, Pages 155-159

0,000

0,314

0

0

16

Polyakov, A., Smirnov, N., Tarelkin, S., Govorkov, A., Bormashov, V., Kuznetsov, M., Teteruk, D., Buga, S., Kornilov, N., Lee, I.-H.

Electrical properties of diamond platinum vertical Schottky barrier diodes

Materials Today: Proceedings

Volume 3, 2016, Pages S159-S164

0,000

0,000

0

0

 

 

 

 

 

1,61

 

4

8